Electron Energy-loss Spectroscopy Characterization of ∼1 nm-thick Amorphous Film at Grain Boundary in Si-based Ceramics
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- Gu Hui
- State Key Laboratory of High Performance Ceramics and Superfine Microstructures, Shanghai Institute of Ceramics, Chinese Academy of Sciences
Bibliographic Information
- Other Title
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- Electron Energy-loss Spectroscopy Characterization of ~1nm-thick Amorphous Film at Grain Boundary in Si-based Ceramics
- Electron Energy-loss Spectroscopy Characterization of ∼1 nm-thick Amorphous Film at Grain Boundary in Si-based Ceramics
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Abstract
In many ceramic systems thin amorphous films of about 1 nm thickness often cover grain boundaries. These amorphous films play a key role not only in the formation of microstructures but also in the thermal-mechanical properties of ceramic materials. However, such thin amorphous layers could not be probed directly by an analytical electron beam. With the recent advances in spatially-resolved electron energy-loss spectroscopy technique, chemical and physical parameters of the thin films could be successfully derived using the “spectrum separation” approach. Basic characters and behaviors of variations for the inter-granular films are analyzed in a few silicon nitride (Si3N4) and silicon carbide (SiC) systems. The combined local chemical-structural information reveal new trends on microstructures and properties, and provides further insights in Si-based ceramic materials.
Journal
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- MATERIALS TRANSACTIONS
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MATERIALS TRANSACTIONS 45 (7), 2091-2098, 2004
The Japan Institute of Metals and Materials
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Details 詳細情報について
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- CRID
- 1390282679228160384
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- NII Article ID
- 10013336645
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- NII Book ID
- AA1151294X
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- COI
- 1:CAS:528:DC%2BD2cXmvFejs7c%3D
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- ISSN
- 13475320
- 13459678
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- NDL BIB ID
- 7015736
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- Text Lang
- en
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- Data Source
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- JaLC
- NDL
- Crossref
- CiNii Articles
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- Abstract License Flag
- Disallowed