Modeling of Silicon Vapor Phase Epitaxy Using Stefan-Maxwell Formalism

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The vapor-phase homoepitaxy of monocrystalline silicon by reduction of chlorosilanes is modeled using a novel approach. With digital computer calculation, the growth rate of silicon is predicted under ambient pressure (1.0 atm or 101.325 kPa) in the high-temperature regime 1200—1600 K, where silicon growth is expected to be mass-transport limited. This study considers four different initial stoichiometries, namely, 0.1% SiH<SUB>4</SUB> + 0.4% HCl + H<SUB>2</SUB>, 0.1% SiCl<SUB>4</SUB> + H<SUB>2</SUB>, 0.5% SiCl<SUB>4</SUB> + H<SUB>2</SUB>, and 0.2% SiHCl<SUB>3</SUB> + H<SUB>2</SUB> in the Si-Cl-H system in order to make comparisons between the predicted and the experimentally determined growth rates. By combining the iterative equilibrium constant method with the Stefan-Maxwell relations for diffusion in a multi-component gas-phase, the respective molar fluxes of nine gaseous species that include SiCl<SUB>4</SUB>, SiHCl<SUB>3</SUB>, SiH<SUB>2</SUB>Cl<SUB>2</SUB>, SiH<SUB>3</SUB>Cl, SiH<SUB>4</SUB>, SiCl<SUB>2</SUB>, SiCl, SiCl<SUB>3</SUB>, and Si(g) were computed for steady-state condition; and the data on fluxes enabled the determination of the net silicon flux to the surface of the substrate. The computed rates were compared to the measured deposition rates of silicon.

収録刊行物

  • Materials transactions

    Materials transactions 45(7), 2395-2402, 2004-07-20

    公益社団法人 日本金属学会

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各種コード

  • NII論文ID(NAID)
    10013337725
  • NII書誌ID(NCID)
    AA1151294X
  • 本文言語コード
    ENG
  • 資料種別
    ART
  • ISSN
    13459678
  • NDL 記事登録ID
    7016228
  • NDL 雑誌分類
    ZP41(科学技術--金属工学・鉱山工学)
  • NDL 請求記号
    Z53-J286
  • データ提供元
    CJP書誌  NDL  J-STAGE 
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