Si/有機高分子絶縁膜界面の密着性評価 Evaluation of Interfacial Adhesion between Si Substrate and Organic Polymer Dielectric Film

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著者

    • 山崎 裕史 YAMAZAKI Hirofumi
    • 東京大学大学院工学系研究科マテリアル工学専攻 Department of Materials Engineering, School of Engineering, University of Tokyo
    • 榎 学 ENOKI Manabu
    • 東京大学大学院工学系研究科マテリアル工学専攻 Department of Materials Engineering, School of Engineering, University of Tokyo

抄録

Recently, organic polymer dielectric films attract attention as promising dielectric films that reduce environmental burdens and inhibit RC-delays. However, its mechanical properties have not been investigated. Therefore, we evaluated its reliability by measuring the interfacial energy release rates during the delamination under various conditions. In this study, SiLK (trademark of the Dow Chemical Company) is selected as dielectric material. We prepared two types of specimens. One consists of spin-coated SiLK layer sandwiched between Si substrates using adhesion bond. The other is made by the following process; solution of SiLK is sandwiched between Si substrates, and it is cured by heating. Four point bending tests and double cantilever beam tests were performed. In the meantime, delamination paths were identified using SEM and ESCA. In the case of heat curing specimens, delamination propagated along interface between Si/SiLK, so we were able to estimate the interfacial energy release rates. By the results of tests under different mode mixties, we could evaluate the criterion for fracture using elipse approximation.

収録刊行物

  • 日本金屬學會誌 = Journal of the Japan Institute of Metals

    日本金屬學會誌 = Journal of the Japan Institute of Metals 68(7), 462-467, 2004-07-20

    公益社団法人 日本金属学会

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各種コード

  • NII論文ID(NAID)
    10013338159
  • NII書誌ID(NCID)
    AN00062446
  • 本文言語コード
    JPN
  • 資料種別
    ART
  • ISSN
    00214876
  • NDL 記事登録ID
    7046627
  • NDL 雑誌分類
    ZP41(科学技術--金属工学・鉱山工学)
  • NDL 請求記号
    Z17-314
  • データ提供元
    CJP書誌  NDL  J-STAGE 
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