Raman Studies of Silicon Clathrate Compounds under High Pressure
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- KUME Tetsuji
- Department of Materials Science and Technology, Gifu University
Bibliographic Information
- Other Title
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- シリコンクラスレート化合物の超高圧ラマン散乱
- シリコンクラスレート カゴウブツ ノ チョウコウアツ ラマン サンラン
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Abstract
This article shows the recent Raman studies for type I silicon clathrates doped with Ba, K, and I atoms under high pressure at room temperature. The obtained Raman spectra indicate vibrational signals related with guest atoms encaged in the Si cages in a frequency region lower than 100 cm-1. In order to explore the pressure-induced phase transition, the Raman spectra were measured for the Si clathrates under high pressures using a diamond anvil cell. The spectral changes associated with the phase transition were observed, and the mechanisms of the phase transition were discussed on the basis of the spectral changes.
Journal
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- The Review of High Pressure Science and Technology
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The Review of High Pressure Science and Technology 14 (2), 167-172, 2004
The Japan Society of High Pressure Science and Technology
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Details 詳細情報について
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- CRID
- 1390001204380575872
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- NII Article ID
- 10013361965
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- NII Book ID
- AN10452913
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- COI
- 1:CAS:528:DC%2BD2cXntV2qsLo%3D
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- ISSN
- 13481940
- 0917639X
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- NDL BIB ID
- 7040812
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- Text Lang
- ja
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- Data Source
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- JaLC
- NDL
- Crossref
- CiNii Articles
- KAKEN
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- Abstract License Flag
- Disallowed