n-Siとp-有機光触媒層からなる光電素子の開発 The development of photo-electric conversion device produced by n-silicon and p-photocatalyst layer

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著者

    • HAKIM Abdul
    • Department of Electrical Engineering, Tokai University

抄録

The opto-electronics device is an element that photoelectric conversion is possible by itself. In the present investigation, the opto-electronics device was constructed by using organic materials. From this research, we attempt to find out the characteristic of opto-electronics produced by n-silicon and p-photocatalyst layer by changing the polymerization quantity of the storage layer and the incident light intesity. It was found that the photovoltage increases linearly with incident light intesity.

収録刊行物

  • Journal of advanced science

    Journal of advanced science 14(1), 39-40, 2002-07-31

    Society of Advanced Science

参考文献:  1件中 1-1件 を表示

各種コード

  • NII論文ID(NAID)
    10013408517
  • NII書誌ID(NCID)
    AA11948435
  • 本文言語コード
    JPN
  • 資料種別
    SHO
  • ISSN
    09155651
  • データ提供元
    CJP書誌  J-STAGE 
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