GaAsを用いたサブミリ波天文学用光伝導検出器の開発 : GaAsの超高純度液相エピタキシャル成長 Development of GaAs photoconductors for submillimeter astronomy : Liquid Phase Epitaxial Growth of GaAs Layer

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The submillimeter wavelength region is the last undeveloped spectral window in modern astronomy. Our purpose is to develop the photoconductive detector for 300μm band using GaAs epitaxial film. The final goal of our detector development is to obtain a Blocked Impurity Band (BIB) type detector. Ultra pure GaAs films have been grown reproducibly by the sliding boat method of Liquid Phase Epitaxy(LPE). The epitaxial films with the carrier density of 5.6×10<sup>13</sup>cm<sup>-3</sup> and the mobility of 86600cm<sup>2</sup>/Vs at 77K were grown.

収録刊行物

  • Journal of advanced science

    Journal of advanced science 14(1), 85-86, 2002-07-31

    Society of Advanced Science

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各種コード

  • NII論文ID(NAID)
    10013408616
  • NII書誌ID(NCID)
    AA11948435
  • 本文言語コード
    JPN
  • 資料種別
    SHO
  • ISSN
    09155651
  • データ提供元
    CJP書誌  J-STAGE 
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