Behavior of Local Current Leakage in Stressed Gate SiO<sub>2</sub> Films Analyzed by Conductive Atomic Force Microscopy

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  • Seko Akiyoshi
    Department of Crystalline Materials Science, Graduate School of Engineering, Nagoya University
  • Watanabe Yukihiko
    Department of Crystalline Materials Science, Graduate School of Engineering, Nagoya University Toyota Central R&D Labs., Inc
  • Kondo Hiroki
    Department of Crystalline Materials Science, Graduate School of Engineering, Nagoya University
  • Sakai Akira
    Department of Crystalline Materials Science, Graduate School of Engineering, Nagoya University
  • Zaima Shigeaki
    Center for Cooperative Research in Advanced Science and Technology, Nagoya University
  • Yasuda Yukio
    Toyota Central R&D Labs., Inc

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  • Behavior of Local Current Leakage in Stressed Gate SiO2 Films Analyzed by Conductive Atomic Force Microscopy

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We studied local leakage currents induced in stressed gate SiO2 films and their time dependence by conductive atomic force microscopy (C-AFM). The current-voltage characteristics of the leakage currents detected in the C-AFM observations indicate Fowler-Nordheim tunneling currents enhanced by holes trapped in the stressed SiO2 films. By repeated C-AFM observations at the same area, it was found that individual spot currents decrease at different rates. This result indicates hole detrapping with different time constants from the stress-induced defects that have different features.

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