結晶性アルミナ超薄膜の作製 Growth of Well-ordered Ultra-thin Al_2O_3 Films

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抄録

An Al-containing ordered alloy, NiAl(110), was oxidized under various conditions of ultra high vacuum. The crystallinity and thickness of the formed alumina films were evaluated. The two-step growth process, where a specimen was oxidized at about 600 K being followed by annealing at ca. 1100 K, is well known. We examined the effect of oxygen pressure, substrate temperature and annealing conditions. A one-step process, where a specimen was oxidized at around annealing temperature so that oxidation and crystallization proceeded simultaneously, has been newly developed. The effects of oxygen pressure and substrate temperature in the one-step growth were clarified. It was revealed that a flat well-ordered alumina film thicker than 0.5 nm (known) could be grown by this new method.

収録刊行物

  • 表面科学 = Journal of The Surface Science Society of Japan

    表面科学 = Journal of The Surface Science Society of Japan 25(8), 458-465, 2004-08-10

    公益社団法人 日本表面科学会

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各種コード

  • NII論文ID(NAID)
    10013444708
  • NII書誌ID(NCID)
    AN00334149
  • 本文言語コード
    JPN
  • 資料種別
    ART
  • ISSN
    03885321
  • NDL 記事登録ID
    7062998
  • NDL 雑誌分類
    ZM35(科学技術--物理学)
  • NDL 請求記号
    Z15-379
  • データ提供元
    CJP書誌  NDL  J-STAGE 
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