高圧下における窒化ガリウムの一致溶融 : 融液徐冷法による単結晶の合成 Congruent Melting of Gallium Nitride under High Pressure and Its Application to Single Crystal Growth

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GaN (Gallium Nitride) is an important material in optoelectronic devices for blue light-emitting diodes and lasers. Large-size single crystals of GaN are strongly desired, which can be used as substrates for epitaxial growth. We made <I>in situ</I> X-ray diffraction experiments using a multi-anvil high-pressure apparatus at the SPring-8 to confirm its decomposition and melting behavior under high pressures and temperatures. Congruent melting of GaN occurred around 2220 °C at pressures above 6.0 GPa, and decreasing the temperature allowed the GaN melt to crystallize to the original structure. This result leads to a new synthesis method of high quality single crystals of GaN by means of slow cooling of its stoichiometric melt under high pressure. Single crystal of GaN with a diameter of 100 μm has been obtained successfully that shows a sharp X-ray rocking curve smaller than 30 seconds.

収録刊行物

  • 日本結晶学会誌

    日本結晶学会誌 46(4), 297-303, 2004-08-31

    日本結晶学会

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各種コード

  • NII論文ID(NAID)
    10013526839
  • NII書誌ID(NCID)
    AN00188364
  • 本文言語コード
    JPN
  • 資料種別
    ART
  • ISSN
    03694585
  • NDL 記事登録ID
    7080059
  • NDL 雑誌分類
    ZM46(科学技術--地球科学--岩石・鉱物・鉱床)
  • NDL 請求記号
    Z15-138
  • データ提供元
    CJP書誌  NDL  J-STAGE 
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