SiCショットキーバリアダイオードの高di/dtスイッチング特性 High di/dt Switching Characteristics of a SiC Schottky Barrier Diode

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著者

    • 高尾 和人 TAKAO Kazuto
    • 独立行政法人産業技術総合研究所 パワーエレクトロニクス研究センター National Institute of Advanced Industrial Science and Technology, Power Electronics Research Center
    • 八尾 勉 YATSUO Tsutomu
    • 独立行政法人産業技術総合研究所 パワーエレクトロニクス研究センター National Institute of Advanced Industrial Science and Technology, Power Electronics Research Center
    • 荒井 和雄 ARAI Kazuo
    • 独立行政法人産業技術総合研究所 パワーエレクトロニクス研究センター National Institute of Advanced Industrial Science and Technology, Power Electronics Research Center

抄録

High <i>di</i>/<i>dt</i> switching characteristics of a commercially available silicon carbide schottky barrier diode (SiC-SBD) has been experimentally evaluated in the various <i>di</i>/<i>dt</i> values of 300 A/<i>μ</i>s to 2500 A/<i>μ</i>s range. Diode voltage waveforms, diode current waveforms, diode stored charges, and diode turn-off losses have been theoretically analyzed. The stored charge and the diode turn-off loss are independent of the forward current value, the <i>di</i>/<i>dt</i> value, and the junction temperature. It is shown that the switching behavior of the SiC-SBD can be expressed a simple variable capacitor, the capacitance of which depends on the reverse bias voltage. The switching characteristics of the SiC-SBD also have been compared to those of a commercially available ultra-fast silicon pn diode (Si-PND). The SiC-SBD has extremely low reverse current and low stored charge compared to those of the Si-PND. The SiC-SBD can reduce the IGBT turn-on loss compared to the Si-PND especially in the high <i>di</i>/<i>dt</i> operation.

収録刊行物

  • 電気学会論文誌. D, 産業応用部門誌 = The transactions of the Institute of Electrical Engineers of Japan. D, A publication of Industry Applications Society

    電気学会論文誌. D, 産業応用部門誌 = The transactions of the Institute of Electrical Engineers of Japan. D, A publication of Industry Applications Society 124(9), 917-923, 2004-09-01

    The Institute of Electrical Engineers of Japan

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被引用文献:  17件中 1-17件 を表示

各種コード

  • NII論文ID(NAID)
    10013538314
  • NII書誌ID(NCID)
    AN10012320
  • 本文言語コード
    JPN
  • 資料種別
    ART
  • ISSN
    09136339
  • NDL 記事登録ID
    7077955
  • NDL 雑誌分類
    ZN31(科学技術--電気工学・電気機械工業)
  • NDL 請求記号
    Z16-1608
  • データ提供元
    CJP書誌  CJP引用  NDL  J-STAGE 
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