パルス圧力付加オリフィス噴射法によるゲルマニウム半導体球形粒子の作製と組織評価 Fabrication and Microstructual Characteristics of Germanium Spherical Semiconductor Particles by Pulsed Orifice Ejection Method

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Germanium spherical particles were prepared by pulsed orifice ejection method. The apparatus was divised for ejecting molten droplet from a small orifice by a reciprocating action of a rod given by piezoelectric actuator. Germanium particles with diameter of several hundreds micrometer could be formed by optimizing process parameters of feeder cross-section area, rod position, supplied pressure and rod displacement. The obtained particles were polycrystal and had microstructure derived either from dendritic growth at a high undercooling or lateral growth at a low undercooling. The latter particles exhibited smaller number of grains than the former ones, and these grain boundaries were twin planes. Finally, solidification mechanisms for the particles were estimated.

収録刊行物

  • 粉体および粉末冶金

    粉体および粉末冶金 51(9), 646-654, 2004-09-15

    一般社団法人 粉体粉末冶金協会

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各種コード

  • NII論文ID(NAID)
    10013560340
  • NII書誌ID(NCID)
    AN00222724
  • 本文言語コード
    JPN
  • 資料種別
    ART
  • ISSN
    05328799
  • NDL 記事登録ID
    7110062
  • NDL 雑誌分類
    ZP41(科学技術--金属工学・鉱山工学)
  • NDL 請求記号
    Z17-274
  • データ提供元
    CJP書誌  CJP引用  NDL  J-STAGE 
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