# Electromigration-Induced Void Growth Kinetics in SiNx-Passivated Single-Damascene Cu Lines

## 抄録

Basic electromigration characteristics of SiNx-passivated single-damascene Cu lines have been investigated. The results indicate that an effective incubation time for void growth contributes to resistance change. This effective incubation time depended inversely on the square of current density. The activation energy of the effective incubation time was $1.14 \pm 0.27$ eV. The observed critical product of electromigration was approximately 5900 A/cm. The activation energy of diffusion was $0.89 \pm 0.07$ eV. These results indicate that the Cu/SiNx interface diffusion activation energy and the effective charge number are similar to those of unpassivated Cu surface diffusion. However, the SiNx-passivated interface of the sample showed significantly reduced drift velocity compared to those of the unpassivated sample.

## 収録刊行物

• Japanese journal of applied physics. Pt. 1, Regular papers & short notes

Japanese journal of applied physics. Pt. 1, Regular papers & short notes 43(9A), 5990-5996, 2004-09-15

Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physics

## 各種コード

• NII論文ID(NAID)
10013573244
• NII書誌ID(NCID)
AA10457675
• 本文言語コード
EN
• 資料種別
ART
• 雑誌種別
大学紀要
• ISSN
0021-4922
• NDL 記事登録ID
7079164
• NDL 雑誌分類
ZM35(科学技術--物理学)
• NDL 請求記号
Z53-A375
• データ提供元
CJP書誌  CJP引用  NDL  J-STAGE  JSAP

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