Difference in Thermal Degradation Behavior of ZrO2 and HfO2 Anodized Capacitors

この論文にアクセスする

この論文をさがす

著者

    • Shinkai Satoko
    • Department of Materials Science, Faculty of Engineering, Kitami Institute of Technology, 165 Koen-cho, Kitami 090-8507, Japan
    • Sasaki Katsutaka
    • Department of Materials Science, Faculty of Engineering, Kitami Institute of Technology, 165 Koen-cho, Kitami 090-8507, Japan
    • Yamane Misao
    • Department of Materials Science, Faculty of Engineering, Kitami Institute of Technology, 165 Koen-cho, Kitami 090-8507, Japan
    • Abe Yoshio
    • Department of Materials Science, Faculty of Engineering, Kitami Institute of Technology, 165 Koen-cho, Kitami 090-8507, Japan

抄録

Microcrystalline ZrO2 and HfO2 thin film capacitors were prepared by anodizing sputter-deposited Zr and Hf films. The thermal degradation behavior of both anodized capacitors was clarified by the measurement of their capacitance properties and Auger depth profiles before and after heat treatment in air. As a result, it is confirmed that the heat-resistance property of the HfO2 anodized capacitor is superior to that of the ZrO2 capacitor. In addition, it is revealed that the thermal degradation of the ZrO2 anodized capacitor is caused by the diffusion of Zr atoms from the underlying layer into the ZrO2 anodized layer, while that of the HfO2 anodized capacitor is caused by the diffusion of oxygen atoms from the anodized layer into the underlying Hf layer.

収録刊行物

  • Japanese journal of applied physics. Pt. 1, Regular papers & short notes

    Japanese journal of applied physics. Pt. 1, Regular papers & short notes 43(9A), 6217-6220, 2004-09-15

    公益社団法人 応用物理学会

参考文献:  13件中 1-13件 を表示

  • <no title>

    FLEMING R. M.

    J. Appl. Phys. 88, 850, 2000

    被引用文献5件

  • <no title>

    ZHANG J.

    Appl. Surf. Phys. 186, 40, 2002

    被引用文献2件

  • <no title>

    NOYA A.

    Trans. IEICE Electron. J67-C, 863, 1984

    被引用文献3件

  • <no title>

    SASAKI K.

    Trans. IEICE Electron. J78-C-II, 113, 1995

    被引用文献2件

  • <no title>

    YANAGISAWA H.

    Jpn. J. Appl. Phys. 41, 5284, 2002

    被引用文献2件

  • <no title>

    ZALAR A.

    Thin Solid Films 124, 223, 1985

    被引用文献11件

  • <no title>

    HARROP P. J.

    Thin Solid Films 2, 273, 1968

    被引用文献4件

  • <no title>

    YAMANE M.

    Trans. IEICE Electron. J79-C-II, 358, 1996

    被引用文献1件

  • <no title>

    WARREN B. E.

    X-ray Diffraction 253, 1990

    被引用文献1件

  • <no title>

    JCPDS-International Centre for Diffraction Data

    PDF-2 Data-base, No 37-1484, 1986

    被引用文献1件

  • <no title>

    JCPDS-International Centre for Diffraction Data

    PDF-2 Data-base, No 42-1164, 1962

    被引用文献1件

  • High-k gate dielectrics : Current status and materials properties considerations

    WILK G. D.

    J. Appl. Phys. 89(10), 5243-5275, 2001

    DOI 被引用文献138件

  • <no title>

    KAMIJYO M.

    Jpn. J. Appl. Phys. 42, 4399, 2003

    DOI 被引用文献1件

各種コード

  • NII論文ID(NAID)
    10013573990
  • NII書誌ID(NCID)
    AA10457675
  • 本文言語コード
    EN
  • 資料種別
    ART
  • 雑誌種別
    大学紀要
  • ISSN
    0021-4922
  • NDL 記事登録ID
    7079698
  • NDL 雑誌分類
    ZM35(科学技術--物理学)
  • NDL 請求記号
    Z53-A375
  • データ提供元
    CJP書誌  NDL  J-STAGE  JSAP 
ページトップへ