Millimeter-Wave Annealing of SrBi2Ta2O9 Films Prepared by Sol–Gel Method

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SrBi2Ta2O9 (SBT) films were prepared on Pt/Ti/SiO2/Si substrates by the sol–gel method, and they were annealed by 28 GHz millimeter-wave (mm-wave) irradiation and electric furnace heating. The mm-wave absorption measurement for each component of the substrate materials and the film indicated a selective heating of the film by the mm-wave. Films annealed with mm-waves had larger grains and smaller amounts of non-ferroelectric pyrochlore than those annealed using an electric furnace. These differences brought about a higher remanent polarization for the mm-wave-annealed films. Leakage current, fatigue and retention properties of films treated by the two methods were comparable.

収録刊行物

  • Japanese journal of applied physics. Pt. 1, Regular papers & short notes

    Japanese journal of applied physics. Pt. 1, Regular papers & short notes 43(9A), 6286-6291, 2004-09-15

    公益社団法人 応用物理学会

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各種コード

  • NII論文ID(NAID)
    10013574180
  • NII書誌ID(NCID)
    AA10457675
  • 本文言語コード
    EN
  • 資料種別
    ART
  • 雑誌種別
    大学紀要
  • ISSN
    0021-4922
  • NDL 記事登録ID
    7079926
  • NDL 雑誌分類
    ZM35(科学技術--物理学)
  • NDL 請求記号
    Z53-A375
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    CJP書誌  NDL  J-STAGE  JSAP 
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