New Inductively Coupled Plasma System Using Divided Antenna for Photoresist Ashing

この論文にアクセスする

この論文をさがす

著者

    • Terai Fujio Terai Fujio
    • Postgraduate Course of Functional Control System, Shibaura Institute of Technology, 3-9-14 Shibaura, Minato-ku, Tokyo 108-8548, Japan
    • Yamage Masashi
    • Corporate Manufacturing Engineering Center, Toshiba Corporation, 33 Shin-isogo-cho, Isogo-ku, Yokohama-shi, Kanagawa 235-0017, Japan
    • Nagatomo Takao
    • Postgraduate Course of Functional Control System, Shibaura Institute of Technology, 3-9-14 Shibaura, Minato-ku, Tokyo 108-8548, Japan
    • Homma Tetsuya
    • Postgraduate Course of Functional Control System, Shibaura Institute of Technology, 3-9-14 Shibaura, Minato-ku, Tokyo 108-8548, Japan

抄録

We have developed an inductively coupled plasma (ICP) system with a small chamber for 300-mm-diameter-wafer processes, and a good uniformity of ashing, and both low substrate temperature and low pressure were achieved. The features of this ICP system are substrate temperatures lower than 60°C in order to suppress chemical reactions, and low pressures of 3–5 Pa to suppress the both oxidation of Cu wiring and the degradation of low-$k$ films. Furthermore, the antenna is divided plurally and capacitively coupled. This new antenna can achieve good uniformity in a small chamber because the capacitive coupling to the chamber through a quartz glass window can be easily controlled by reducing series impedance, even when the radio frequency (rf) power is very high. Moreover, the damage to the quartz glass window can be decreased by controlling the series impedance of the antenna, resulting in a long-lasting quartz window. The chamber structure was also optimized by performing an original plasma simulation to improve the uniformity of ashing rate. As results for 300-mm-diameter wafers in the 460-mm-diameter chamber, an average ashing rate of 848 nm/min with a uniformity of $\pm 5.5$% was obtained for photoresist films under the following conditions: an O2 gas flow rate of 200 sccm, a substrate temperature of 60°C, a gas pressure of 3 Pa and an rf power of 4 kW.

収録刊行物

  • Japanese journal of applied physics. Pt. 1, Regular papers & short notes

    Japanese journal of applied physics. Pt. 1, Regular papers & short notes 43(9A), 6392-6398, 2004-09-15

    Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physics

参考文献:  10件中 1-10件 を表示

  • <no title>

    NAGAI H.

    Dry Process Int. Symp., 2001 147, 2001

    被引用文献1件

  • <no title>

    KOJIMA A.

    Dry Process Int. Symp., 2001 165, 2001

    被引用文献1件

  • <no title>

    HOPWOOD J.

    Plasma Sources Sci. Technol 1, 109, 1992

    被引用文献29件

  • <no title>

    SUGAI H.

    Jpn. J. Appl. Phys. 33, 2189, 1994

    被引用文献13件

  • <no title>

    YU Z.

    J. Vac. Sci. Technol. A 13, 871, 1995

    被引用文献2件

  • <no title>

    YOSHIDA K.

    Jpn. J. Appl. Phys. 34, 2089, 1995

    被引用文献1件

  • <no title>

    KOKURA H.

    Jpn. J. Appl. Phys. 38, 5262, 1999

    被引用文献16件

  • <no title>

    JANOWIAK C.

    J. Vac. Sci. & Technol. A 18, 1859, 2000

    被引用文献2件

  • <no title>

    JIWARI N.

    Jpn. J. Appl. Phys. 32, 3019, 1993

    DOI 被引用文献10件

  • Free Radicals in an Inductively Coupled Etching Plasma

    Hikosaka Yukinobu , Nakamura Moritaka , Sugai Hideo

    Jpn J Appl Phys 33(4B), 2157-2163, 1994-04-30

    応用物理学会 被引用文献6件

各種コード

  • NII論文ID(NAID)
    10013574620
  • NII書誌ID(NCID)
    AA10457675
  • 本文言語コード
    EN
  • 資料種別
    ART
  • 雑誌種別
    大学紀要
  • ISSN
    0021-4922
  • NDL 記事登録ID
    7080132
  • NDL 雑誌分類
    ZM35(科学技術--物理学)
  • NDL 請求記号
    Z53-A375
  • データ提供元
    CJP書誌  NDL  J-STAGE  JSAP 
ページトップへ