Study on the Absolute Density and Translational Temperature of Si Atoms in Very High Frequency Capacitively Coupled SiH4 Plasma with Ar, N2, and H2 Dilution Gases

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著者

    • Ohta Takayuki Ohta Takayuki
    • Department of Quantum Engineering, Graduate School of Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603, Japan
    • Hori Masaru Hori Masaru
    • Department of Quantum Engineering, Graduate School of Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603, Japan
    • Goto Toshio
    • Department of Quantum Engineering, Graduate School of Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603, Japan
    • Ito Masafumi
    • Department of Opto-Mechatronics, Faculty of Systems Engineering, Wakayama University, 930 Sakaedani, Wakayama 640-8510, Japan
    • Kawakami Satoru
    • Tokyo Electron AT Ltd., 650 Mitsuzawa, Hosaka-cho, Nirasaki 407-0192, Japan

抄録

The absolute densities and translational temperatures of Si atoms in very high frequency capacitively coupled SiH4 plasmas diluted with Ar, N2, and H2 gases were investigated by ultraviolet absorption spectroscopy with a ring dye laser and a hollow cathode lamp. It was found that the absolute density of Si atoms was of the order of $10^{9}$–$10^{10}$ cm-3 and the translational temperature of Si atoms ranged from 620 to 1130 K at a total pressure of 11 Pa, a dilution gas flow rate of 100 sccm, and a SiH4 flow rate of 0–15 sccm. The absolute densities and temperatures of Si atoms in plasma at an excitation frequency of 27 MHz were larger than those at 60 MHz under the conditions at the same electron density. Si atom heating was due to the energy of Si atoms released from the electron impact dissociation of SiHx ($x=1--4$). The translational temperatures of Si atoms in SiH4/Ar, SiH4/N2, and SiH4/H2 plasmas were evaluated to be 970, 1030, and 1130 K, respectively, at a frequency of 27 MHz, a SiH4 flow rate of 10 sccm, and a VHF power of 1500 W. The effect of Si atoms and SiH3 radicals on film deposition was investigated for SiH4/N2 in 27 MHz and 60 MHz plasmas. From the measurement using Fourier transform infrared absorption spectroscopy, the peak of the Si–H bond decreased and that of the N–H bond increased with increasing excitation frequency. Therefore, the film deposited at 60 MHz indicated a nitride-rich composition in comparison with that at 27 MHz. The contribution ratio of Si atoms to SiH3 radicals for film deposition in 27 MHz plasma was larger than that in 60 MHz plasma. These results are very important from the viewpoint of understanding neutral radical chemistries in the plasma and their related processing.

収録刊行物

  • Japanese journal of applied physics. Pt. 1, Regular papers & short notes

    Japanese journal of applied physics. Pt. 1, Regular papers & short notes 43(9A), 6405-6412, 2004-09-15

    Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physics

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各種コード

  • NII論文ID(NAID)
    10013574658
  • NII書誌ID(NCID)
    AA10457675
  • 本文言語コード
    EN
  • 資料種別
    ART
  • 雑誌種別
    大学紀要
  • ISSN
    0021-4922
  • NDL 記事登録ID
    7080155
  • NDL 雑誌分類
    ZM35(科学技術--物理学)
  • NDL 請求記号
    Z53-A375
  • データ提供元
    CJP書誌  NDL  J-STAGE  JSAP 
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