Organic Film Reactive Ion Etching Using 100 MHz rf Capacitive Coupled Plasma

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著者

    • Ohiwa Tokuhisa Ohiwa Tokuhisa
    • Process & Manufacturing Engineering Center, Toshiba Corporation Semiconductor Company, 8 Shinsugita-cho, Isogo-ku, Yokohama 235-8522, Japan
    • Hayashi Hisataka Hayashi Hisataka
    • Process & Manufacturing Engineering Center, Toshiba Corporation Semiconductor Company, 8 Shinsugita-cho, Isogo-ku, Yokohama 235-8522, Japan
    • Sakai Itsuko [他] Sakai Itsuko
    • Process & Manufacturing Engineering Center, Toshiba Corporation Semiconductor Company, 8 Shinsugita-cho, Isogo-ku, Yokohama 235-8522, Japan
    • Kojima Akihiro
    • Process & Manufacturing Engineering Center, Toshiba Corporation Semiconductor Company, 8 Shinsugita-cho, Isogo-ku, Yokohama 235-8522, Japan
    • Shinomiya Eiichiro
    • Process & Manufacturing Engineering Center, Toshiba Corporation Semiconductor Company, 8 Shinsugita-cho, Isogo-ku, Yokohama 235-8522, Japan

抄録

A new reactive ion etching (RIE) process using a 100 MHz rf capacitive coupled plasma (CCP), where the wafer is placed on the cathode, has been studied. The electron densities obtained in the 100 MHz Ar plasma process were higher than those obtained in the 13.56 MHz Ar plasma process, and self-bias voltages ($-\mathit{Vdc}$) obtained in the 100 MHz plasma process were less than 1/3 of those obtained in the 13.56 MHz plasma process. The resist etch process in the 100 MHz plasma process using hydrogen-based gas chemistry showed high selectivity to SiO2 above 50. Also, the stacked mask process (S-MAP) in the 100 MHz plasma process showed a great improvement of the carbon film etch profile with less faceting of the spin-on-glass (SOG) mask, compared with that in the 13.56 MHz plasma process. Furthermore, the 100 MHz organic low-$k$ film etch process using a SiO2 etch mask showed less erosion of the SiO2 mask edge and straight sidewall profile of the organic low-$k$ film. The 100 MHz rf CCP process has a great advantage in organic film etching.

収録刊行物

  • Japanese journal of applied physics. Pt. 1, Regular papers & short notes

    Japanese journal of applied physics. Pt. 1, Regular papers & short notes 43(9A), 6413-6417, 2004-09-15

    公益社団法人 応用物理学会

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各種コード

  • NII論文ID(NAID)
    10013574691
  • NII書誌ID(NCID)
    AA10457675
  • 本文言語コード
    EN
  • 資料種別
    ART
  • 雑誌種別
    大学紀要
  • ISSN
    0021-4922
  • NDL 記事登録ID
    7080165
  • NDL 雑誌分類
    ZM35(科学技術--物理学)
  • NDL 請求記号
    Z53-A375
  • データ提供元
    CJP書誌  NDL  J-STAGE  JSAP 
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