Organic Film Reactive Ion Etching Using 100 MHz rf Capacitive Coupled Plasma

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  • Ohiwa Tokuhisa
    Process & Manufacturing Engineering Center, Toshiba Corporation Semiconductor Company
  • Hayashi Hisataka
    Process & Manufacturing Engineering Center, Toshiba Corporation Semiconductor Company
  • Sakai Itsuko
    Process & Manufacturing Engineering Center, Toshiba Corporation Semiconductor Company
  • Kojima Akihiro
    Process & Manufacturing Engineering Center, Toshiba Corporation Semiconductor Company
  • Shinomiya Eiichiro
    Process & Manufacturing Engineering Center, Toshiba Corporation Semiconductor Company

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Abstract

A new reactive ion etching (RIE) process using a 100 MHz rf capacitive coupled plasma (CCP), where the wafer is placed on the cathode, has been studied. The electron densities obtained in the 100 MHz Ar plasma process were higher than those obtained in the 13.56 MHz Ar plasma process, and self-bias voltages (−Vdc) obtained in the 100 MHz plasma process were less than 1/3 of those obtained in the 13.56 MHz plasma process. The resist etch process in the 100 MHz plasma process using hydrogen-based gas chemistry showed high selectivity to SiO2 above 50. Also, the stacked mask process (S-MAP) in the 100 MHz plasma process showed a great improvement of the carbon film etch profile with less faceting of the spin-on-glass (SOG) mask, compared with that in the 13.56 MHz plasma process. Furthermore, the 100 MHz organic low-k film etch process using a SiO2 etch mask showed less erosion of the SiO2 mask edge and straight sidewall profile of the organic low-k film. The 100 MHz rf CCP process has a great advantage in organic film etching.

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