CuAlS2 Thin-Films Prepared by Sulfurization of Metallic Precursors and their Properties

• Bhandari Ramesh Kumar

  Department of Electrical and Electronic Engineering, Faculty of Engineering, Shinshu University

• Hashimoto Yoshio

  Department of Electrical and Electronic Engineering, Faculty of Engineering, Shinshu University

• Ito Kentaro

  Department of Electrical and Electronic Engineering, Faculty of Engineering, Shinshu University

Bibliographic Information

Other Title

• CuAlS₂Thin-Films Prepared by Sulfurization of Metallic Precursors and their Properties

Abstract

CuAlS₂ thin-films with the (112) preferred orientation have been prepared for the first time by sulfurization of metallic precursors in a vacuum-sealed quartz ampule at temperatures ranging from 530°C to 850°C. The film had resistivity as low as 62 Ω·cm, and exhibited p-type conduction. The structure of the film was characterized by X-ray diffraction, scanning electron microscopy and electron probe micro-analysis. The bandgap estimated by an optical transmission measurement was 3.50 eV, in fair agreement with that of the single crystal.

Journal

• Japanese Journal of Applied Physics

  Japanese Journal of Applied Physics 43 (10), 6890-6893, 2004

  The Japan Society of Applied Physics

Keywords

• CuAlS<SUB>2</SUB> thin-film
• wide bandgap
• metallic precursor
• sulfurization
• resistivity
• transparent <I>p</I>-type conductor

Details

• CRID: 1390001206263781760
• NII Article ID: 210000056499
• NII Article ID: 10013744932
• NII Article ID: 130004531494
• NII Book ID: AA10457675
• DOI: 10.1143/jjap.43.6890
• ISSN: 13474065
• ISSN: 00214922
• NDL BIB ID: 7124062
• Web Site: https://ndlsearch.ndl.go.jp/books/R000000004-I7124062
• Web Site: http://stacks.iop.org/1347-4065/43/i=10R/a=6890/pdf
• Text Lang: en
• Data Source:
  • JaLC
  • NDL
  • Crossref
  • CiNii Articles
• Abstract License Flag: Disallowed