新規強磁性自由層を用いたMRAMの磁化反転ばらつきの改善 Improvement of Switching Field Distribution in MRAM with Free Layer of Various Composition and Microstructure

この論文をさがす

著者

    • NAM K.-T.
    • Process Development Team, Semiconductor R&D Division, Samsung Electronics co., ltd.
    • LEE J. E.
    • Process Development Team, Semiconductor R&D Division, Samsung Electronics co., ltd.
    • BAE J. S.
    • Process Development Team, Semiconductor R&D Division, Samsung Electronics co., ltd.
    • OH S. C.
    • Process Development Team, Semiconductor R&D Division, Samsung Electronics co., ltd.
    • HA Y. K.
    • Process Development Team, Advanced Process development PT, Samsung Electronics co., ltd.
    • KIM H.-J.
    • Process Development Team, Advanced Process development PT, Samsung Electronics co., ltd.
    • PARK S. O.
    • Process Development Team, Semiconductor R&D Division, Samsung Electronics co., ltd.
    • KIM H. S.
    • Process Development Team, Semiconductor R&D Division, Samsung Electronics co., ltd.
    • CHUNG U.-In.
    • Process Development Team, Semiconductor R&D Division, Samsung Electronics co., ltd.
    • MOON J. T.
    • Process Development Team, Semiconductor R&D Division, Samsung Electronics co., ltd.

収録刊行物

  • 日本応用磁気学会学術講演概要集 = Digest of ... annual conference on magnetics in Japan

    日本応用磁気学会学術講演概要集 = Digest of ... annual conference on magnetics in Japan 28, 217, 2004-09-21

各種コード

  • NII論文ID(NAID)
    10013769244
  • NII書誌ID(NCID)
    AN10269644
  • 本文言語コード
    JPN
  • 資料種別
    SHO
  • データ提供元
    CJP書誌 
ページトップへ