Ferromagnetism of Heteroepitaxial Zn1-xCuxO Films Grown on n-GaN Substrates

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Ferromagnetic Zn1-xCuxO (ZnO:Cu) films were epitaxially grown on n-GaN(0001)/Al2O3(0001) by radio-frequency magnetron sputtering at a substrate temperature as low as 700°C. X-ray diffraction $\theta$-$2\theta$ scans, $\phi$-scans, and surface morphology studies revealed the degree of crystallinity, epitaxiality, and grain size. The full-width at half-maximum of the peak for the ZnO:Cu films deposited on GaN was below 0.18° according to $\omega$-scans. The chemical bonding states and depth profiles of the films were investigated by X-ray photoelectron spectroscopy (XPS) and with a glow discharge spectrometer (GDS). A magnetic property measurement revealed that Cu-doped ZnO films exhibit ferromagnetic behavior with a strong exchange interaction between $sp$-band carriers and localized $d$ electrons at room temperature.

収録刊行物

  • Japanese journal of applied physics. Pt. 2, Letters

    Japanese journal of applied physics. Pt. 2, Letters 43(11A), L1383-L1386, 2004-11-01

    公益社団法人 応用物理学会

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各種コード

  • NII論文ID(NAID)
    10013787140
  • NII書誌ID(NCID)
    AA10650595
  • 本文言語コード
    EN
  • 資料種別
    SHO
  • ISSN
    0021-4922
  • NDL 記事登録ID
    7146536
  • NDL 雑誌分類
    ZM35(科学技術--物理学)
  • NDL 請求記号
    Z54-J337
  • データ提供元
    CJP書誌  NDL  J-STAGE  JSAP 
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