Analytical Estimation of Effective Lifetimes of Minority Carriers Injected with Laser Pulse into Dry-Oxidized p-Type Silicon Wafer

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抄録

Effective lifetimes measured with the microwave-detected photoconductive decay method are often unexpectedly short compared with those obtained with the conventional photoconductive decay method, particularly when photocarriers stored in space-charge layers at the surfaces of specimen wafers are negligible compared with those remaining in the specimen volume. On numerically resolving the continuity equation for excess photocarriers, it has been found that the short effective lifetimes are caused mainly by the surface electric fields of the specimens and partly by the relatively short wavelength (905 nm) of the photocarrier-generating laser beam. The comparatively short pulse width (150 ns) of the beam must also be a cause.

収録刊行物

  • Japanese journal of applied physics. Pt. 2, Letters

    Japanese journal of applied physics. Pt. 2, Letters 43(11A), L1394-L1396, 2004-11-01

    Japan Society of Applied Physics

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各種コード

  • NII論文ID(NAID)
    10013787202
  • NII書誌ID(NCID)
    AA10650595
  • 本文言語コード
    EN
  • 資料種別
    SHO
  • ISSN
    0021-4922
  • NDL 記事登録ID
    7146585
  • NDL 雑誌分類
    ZM35(科学技術--物理学)
  • NDL 請求記号
    Z54-J337
  • データ提供元
    CJP書誌  NDL  J-STAGE  JSAP 
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