Dense Structure of SiN<sub><i>x</i></sub>Films Fabricated by Radical Beam Deposition Method Using Hexamethyldisilazane
-
- Taguchi Kohshi
- Department of Electronics and Information Science, Kyoto Institute of Technology SAKIGAKE-Semiconductor Co., Incubation Laboratory, Kyoto Institute of Technology
-
- Yoshimoto Masahiro
- Cooperative Research Center, Kyoto Institute of Technology
-
- Saraie Junji
- Department of Electronics and Information Science, Kyoto Institute of Technology
-
- Chayahara Akiyoshi
- AIST Kansai
-
- Horino Yuji
- AIST Kansai
書誌事項
- タイトル別名
-
- Dense Structure of SiNx Films Fabricated by Radical Beam Deposition Method Using Hexamethyldisilazane
この論文をさがす
抄録
The mass density was evaluated by Rutherford backscattering spectroscopy for silicon nitride (SiNx) films with considerably low carbon concentration deposited from hexamethyldisilazane by the radical beam deposition method. The mass density of the film deposited at a low substrate temperature (room temperature ∼ 400°C) was comparable to those of conventional SiNx films deposited from SiH4. This indicates a compatibilty of the film in this work with conventional films. For the films deposited at a substrate temperature above 400°C, H and excess N were eliminated from the film, and the mass density was evaluated to be 3.2 g/cm3, which is comparable to that of Si3N4 formed by the sintering method.
収録刊行物
-
- Japanese Journal of Applied Physics
-
Japanese Journal of Applied Physics 43 (11A), L1403-L1405, 2004
The Japan Society of Applied Physics
- Tweet
キーワード
詳細情報 詳細情報について
-
- CRID
- 1390001206266483072
-
- NII論文ID
- 210000057031
- 10013787251
-
- NII書誌ID
- AA11906093
-
- ISSN
- 13474065
- 00214922
-
- NDL書誌ID
- 7146630
-
- 本文言語コード
- en
-
- データソース種別
-
- JaLC
- NDL
- Crossref
- CiNii Articles
-
- 抄録ライセンスフラグ
- 使用不可
