Oxygen Vacancy Induced Substantial Threshold Voltage Shifts in the Hf-based High-K MISFET with p+poly-Si Gates -A Theoretical Approach

• Shiraishi Kenji

  Institute of Physics, University of Tsukuba National Institute for Material Science

• Yamada Keisaku

  National Institute for Material Science Nanotechnology Research Laboratory, Waseda University

• Torii Kazuyoshi

  Semiconductor Leading Edge Technologies Inc.

• Akasaka Yasushi

  Semiconductor Leading Edge Technologies Inc.

• Nakajima Kiyomi

  National Institute for Material Science

• Konno Mitsuru

  Application Technology Department, Naka Customer Center, Hitachi Science Systems, Ltd.

• Chikyow Toyohiro

  National Institute for Material Science

• Kitajima Hiroshi

  Semiconductor Leading Edge Technologies Inc.

• Arikado Tsunetoshi

  Semiconductor Leading Edge Technologies Inc.

Bibliographic Information

Other Title

• Oxygen Vacancy Induced Substantial Threshold Voltage Shifts in the Hf-based High-<i>K</i>MISFET with p+poly-Si Gates -A Theoretical Approach

Abstract

A theoretical investigation has been made of the origin of substantial threshold voltage (V_th) shifts observed in p+poly-Si gate Hf-based metal insulator semiconductor field effect transistors (MISFETs), by focusing on the effect of oxygen vacancy (V_O) formation in HfO₂. It has been found that V_O formation and subsequent electron transfer across the interface definitely causes substantial V_th shifts, especially in p+poly-Si gate MISFETs. Moreover, the theory also systematically reproduces recent experimental reports that large flat band (V_fb) shifts are observed, even in intrinsic poly-Si gates, and that the V_fb shifts exhibit a high dependence on HfSiO_x thickness.

Journal

• Japanese Journal of Applied Physics

  Japanese Journal of Applied Physics 43 (11A), L1413-L1415, 2004

  The Japan Society of Applied Physics

Keywords

• high-<I>k</I> dielectrics
• poly-Si-gate electrode
• Fermi level pinning
• theory
• oxygen vacancy
• HfO<SUB>2</SUB>
• flatband shift
• threshold voltage shift

Details

• CRID: 1390001206266492416
• NII Article ID: 210000057034
• NII Article ID: 10013787295
• NII Book ID: AA11906093
• DOI: 10.1143/jjap.43.l1413
• ISSN: 13474065
• ISSN: 00214922
• ISSN: http://id.crossref.org/issn/13474065
• NDL BIB ID: 7146707
• Web Site: http://id.ndl.go.jp/bib/7146707
• Web Site: https://ndlsearch.ndl.go.jp/books/R000000004-I7146707
• Web Site: http://stacks.iop.org/1347-4065/43/i=11A/a=L1413/pdf
• Text Lang: en
• Data Source:
  • JaLC
  • NDL
  • Crossref
  • CiNii Articles
• Abstract License Flag: Disallowed