Growth and Characterization of (Ba0.5Sr0.5)TiO3 Films Epitaxially Grown on (002) GaN/(0006) Al2O3 Electrode

この論文にアクセスする

この論文をさがす

著者

    • Jeong Se-Young
    • School of Nano-Science and Technology, Pusan National University, Busan 609-735, Korea
    • Yoon Soon-Gil
    • Department of Materials Engineering, Chungnam National University, Daeduk Science Town, Daejon 305-764, Korea
    • Lee Won-Jae
    • Electronic Ceramics Center (ECC), Department of Information Materials Engineering, Dong-Eui University, Busan 614-714, Korea

抄録

Epitaxial (Ba0.5Sr0.5)TiO3 (BST) films have been grown on an n-GaN/(0006) Al2O3 by pulsed-laser deposition. X-ray $\theta$-2$\theta$, $\omega$-rocking curves, and $\phi$-scans reveal the epitaxial growth of (111) BST/(002) GaN bilayers. The full-width at half-maximum (FWHM) of (111) BST deposited on GaN was 0.95°. The depth profile of the film was recorded by Auger electron spectroscopy (AES). The dielectric constant of the BST film was about 510 with a dielectric loss of 0.05 at 1 kHz. The memory window of the epitaxial BST film was about 2 V for an applied voltage range of $-8$ V to 3 V.

収録刊行物

  • Japanese journal of applied physics. Pt. 2, Letters

    Japanese journal of applied physics. Pt. 2, Letters 43(11A), L1425-L1428, 2004-11-01

    Japan Society of Applied Physics

参考文献:  15件中 1-15件 を表示

  • <no title>

    NAGARAJ B.

    Appl. Phys. Lett. 74, 3194, 1999

    被引用文献1件

  • <no title>

    CHANG W.

    Appl. Phys. Lett. 74, 1033, 1999

    被引用文献5件

  • <no title>

    JIA Q. X.

    Appl.Phys.Lett. 66, 2197, 1995

    被引用文献9件

  • <no title>

    MOON S. E.

    Appl. Phys. Lett. 83, 2166, 2003

    被引用文献2件

  • <no title>

    CHU C. M.

    Appl. Phys. Lett. 70, 249, 1997

    被引用文献2件

  • <no title>

    CARLSON C. M.

    Appl. Phys. Lett. 76, 1920, 2000

    被引用文献3件

  • <no title>

    REN F.

    Appl. Phys. Lett. 73, 3893, 1998

    被引用文献5件

  • <no title>

    JOHNSON J. W.

    Appl. Phys. Lett. 77, 3230, 2000

    被引用文献2件

  • <no title>

    WONG-NG W.

    Powder Diffraction 4, 116, 1989

    被引用文献1件

  • <no title>

    CHILDS K. D.

    Handbook of AES, 1995

    被引用文献1件

  • <no title>

    SINNAMON L. J.

    Appl. Phys. Lett. 78, 1724, 2001

    被引用文献3件

  • <no title>

    PERTSEV. N. A.

    Phys. Rev. Lett. 80, 1988, 1998

    被引用文献4件

  • <no title>

    LI H.

    Appl. Phys. Lett. 81, 4398, 2002

    被引用文献1件

  • <no title>

    MADAR R.

    J. Cryst. Growth 31, 197-203, 1975

    DOI 被引用文献6件

  • <no title>

    JUN S.

    Appl. Phys. Lett. 78, 2542, 2001

    被引用文献2件

各種コード

  • NII論文ID(NAID)
    10013787346
  • NII書誌ID(NCID)
    AA10650595
  • 本文言語コード
    EN
  • 資料種別
    SHO
  • ISSN
    0021-4922
  • NDL 記事登録ID
    7146774
  • NDL 雑誌分類
    ZM35(科学技術--物理学)
  • NDL 請求記号
    Z54-J337
  • データ提供元
    CJP書誌  NDL  J-STAGE  JSAP 
ページトップへ