Device Characteristics of AlGaN/GaN MIS-HFET Using Al2O3–HfO2 Laminated High-$k$ Dielectric

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著者

    • Bae Young-Ho
    • Uiduk University, San50, Yukeum-Ri, Kangdong-meon, Kyungjoo, Korea
    • Lee Chun-Soo
    • Genitech Inc. 1694-5, Sinil-dong, Daeduck-gu, Daejeon, Korea
    • Lee Jong-Lam
    • Department of Materials Science and Engineering, Pohang University of Science and Technology (POSTECH) Pohang, Kyungbuk 790-784, Korea
    • Lee Jung-Hee
    • School of Electrical Engineering & Computer Science, Kyungpook National University, Daegu 702-701, Korea

抄録

This is the first report on an AlGaN/GaN metal-insulator-semiconductor-heterostructure field-effect transistors (MIS-HFET) with an Al2O3–HfO2 laminated high-$k$ dielectric, deposited by plasma-enhanced atomic layer deposition (PEALD). Based on capacitance-voltage measurements, the dielectric constant of the deposited Al2O3–HfO2 laminated layer was estimated to be 15. The fabricated MIS-HFET with a gate length of 1.2 μm exhibited a maximum drain current of 500 mA/mm and a maximum transconductance of 125 mS/mm. The gate leakage current was at least 4 orders of magnitude lower than that of the reference HFET. The pulsed current-voltage curve revealed that the Al2O3–HfO2 laminated dielectric effectively passivated the surface of the device.

収録刊行物

  • Japanese journal of applied physics. Pt. 2, Letters

    Japanese journal of applied physics. Pt. 2, Letters 43(11A), L1433-L1435, 2004-11-01

    Japan Society of Applied Physics

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各種コード

  • NII論文ID(NAID)
    10013787383
  • NII書誌ID(NCID)
    AA10650595
  • 本文言語コード
    EN
  • 資料種別
    SHO
  • ISSN
    0021-4922
  • NDL 記事登録ID
    7146792
  • NDL 雑誌分類
    ZM35(科学技術--物理学)
  • NDL 請求記号
    Z54-J337
  • データ提供元
    CJP書誌  NDL  J-STAGE  JSAP 
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