Study on the Seeded Growth of AlN Bulk Crystals by Sublimation

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  • Balakrishnan Krishnan
    Faculty of Science and Technology, 21st Century COE Nano-Factory, Meijo University
  • Iwaya Motoaki
    Faculty of Science and Technology, 21st Century COE Nano-Factory, Meijo University
  • Kamiyama Satoshi
    Faculty of Science and Technology, 21st Century COE Nano-Factory, Meijo University
  • Amano Hiroshi
    Faculty of Science and Technology, 21st Century COE Nano-Factory, Meijo University
  • Akasaki Isamu
    Faculty of Science and Technology, 21st Century COE Nano-Factory, Meijo University
  • Takagi Takashi
    Ceramic Operation, Ibiden Company Limited
  • Noro Tadashi
    Ceramic Operation, Ibiden Company Limited

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Abstract

Seeded growth of AlN single crystals on 6H-SiC substrates by sublimation has been investigated. Pyrocarbon coated graphite crucibles were used. Temperature profile and source-substrate distance have been found to be the most influencing parameters of crystal growth. AlN crystals of maximum dimension 9 mm (length) × 5 mm (width) × 300 μm (thickness) were grown on SiC substrates and the best crystal showed an XRD omega rocking curve FWHM of 4.81 arcmin. AlN nucleated as independent hexagonal islands and coalesced as growth progressed on. Growth rate of AlN grown on C-face SiC has been found to be higher than that on Si-face SiC. Pyrocarbon coated crucibles have been found to be better suited for AlN growth as the impurity incorporation in to crystals due to crucible was less.

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