Unoccupied Electronic State of SrTi_1-<i>x</i>Nb_<i>x</i>O₃Observed by Inverse-Photoemission Spectroscopy

• Higuchi Tohru

  Department of Applied Physics, Tokyo University of Science

• Tezuka Yasuhisa

  Department of Electronic and Information System Engineering, Hirosaki University

• Hattori Takeshi

  Department of Applied Physics, Tokyo University of Science

• Yamaguchi Shu

  Department of Materials and Science, University of Tokyo

• Shin Shik

  Institute for Solid State Physics, University of Tokyo RIKEN

• Tsukamoto Takeyo

  Department of Applied Physics, Tokyo University of Science

書誌事項

タイトル別名

• Unoccupied Electronic State of SrTi1-xNbxO3 Observed by Inverse-Photoemission Spectroscopy

抄録

The unoccupied electronic state of Nb⁵⁺-doped SrTiO₃ (SrTi_1−xNb_xO₃) has been studied by inverse-photoemission spectroscopy (IPES). The IPES spectra exhibit three features, which correspond to the t_2g- and e_g-subbands of the Ti 3d state and Sr 4d state. The peak positions and bandwidths of the IPES spectra are in good agreement with the standard band calculation. The intensity of the t_2g-subband decreases with increasing Nb⁵⁺ concentration. This finding indicates that the doped electron enters the bottom of the Ti 3d-induced conduction band.

収録刊行物

• Japanese Journal of Applied Physics

  Japanese Journal of Applied Physics 43 (11A), 7623-7624, 2004

  The Japan Society of Applied Physics

キーワード

• SrTi<SUB>1−<I>x</I></SUB>Nb<I><SUB>x</SUB></I>O<SUB>3</SUB>
• inverse-photoemission spectroscopy (IPES)
• unoccupied state
• Ti 3<I>d</I>
• rigid-band model

詳細情報

• CRID: 1390282681241154176
• NII論文ID: 210000056675
• NII論文ID: 10014030549
• NII書誌ID: AA10457675
• DOI: 10.1143/jjap.43.7623
• ISSN: 13474065
• ISSN: 00214922
• Web Site: http://stacks.iop.org/1347-4065/43/i=11R/a=7623/pdf
• 本文言語コード: en
• データソース種別:
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  • Crossref
  • CiNii Articles
• 抄録ライセンスフラグ: 使用不可