Improvement of Crystalline Quality of BeZnSe Using Buffer Layer by Migration Enhanced Epitaxy on GaP(001) Substrate

• Yokoyama Takeshi

  Department of Information Processing, Tokyo Institute of Technology

• Niiyama Yuuki

  Department of Information Processing, Tokyo Institute of Technology

• Murata Tomoyuki

  Department of Information Processing, Tokyo Institute of Technology

• Watanabe Masahiro

  Department of Information Processing, Tokyo Institute of Technology

抄録

The epitaxial growth of BeZnSe on a GaP(001) substrate has been demonstrated using migration enhanced epitaxy (MEE), in which the group-II materials (Be, Zn) and Se were irradiated on a substrate by turns, in order to improve the crystalline quality of the epilayer. As a result, in the photoluminescence (PL) measurements, the full-width at half-maximum (FWHM) value of the BeZnSe epilayer grown by molecular beam epitaxy (MBE) with a buffer layer (BL) grown by MEE was 56 meV at 13 K, and 82 meV at room temperature. The etch pit density (EPD) of the oval-type pits was 3.0×10⁷ cm⁻², and no small-type pits were observed. These results were obtained by reducing the number of stacking faults and/or perfect dislocations in the initial growth stage of MEE.

収録刊行物

• Japanese Journal of Applied Physics

  Japanese Journal of Applied Physics 44 (1-7), L75-L77, 2005

  The Japan Society of Applied Physics

キーワード

• Be-chalcogenides
• ultraviolet emission
• lattice match
• GaP
• migration enhanced epitaxy
• buffer layer

詳細情報

• CRID: 1390001206266887168
• NII論文ID: 10014420363
• NII論文ID: 210000059647
• NII書誌ID: AA11906093
• DOI: 10.1143/jjap.44.l75
• ISSN: 13474065
• ISSN: 00214922
• NDL書誌ID: 7257493
• Web Site: http://id.ndl.go.jp/bib/7257493
• Web Site: https://ndlsearch.ndl.go.jp/books/R000000004-I7257493
• Web Site: https://iopscience.iop.org/article/10.1143/JJAP.44.L75
• Web Site: https://iopscience.iop.org/article/10.1143/JJAP.44.L75/pdf
• 本文言語コード: en
• データソース種別:
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  • NDL
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• 抄録ライセンスフラグ: 使用不可