Atomic Force Microscope Current-Imaging Study for Current Density through Nanocrystalline Silicon Dots Embedded in SiO2
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- Salem Mohamed Ali
- Quantum Nanoelectronics Research Center, Tokyo Institute of Technology
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- Mizuta Hiroshi
- Department of Physical Electronics, Tokyo Institute of Technology
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- Oda Shunri
- Quantum Nanoelectronics Research Center, Tokyo Institute of Technology
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- Fu Ying
- Microelectronics Center at Chalmers and Department of Physics, University of Goteborg and Chalmers University of Technology
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- Willander Magnus
- Microelectronics Center at Chalmers and Department of Physics, University of Goteborg and Chalmers University of Technology
Bibliographic Information
- Other Title
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- Atomic Force Microscope Current-Imaging Study for Current Density through Nanocrystalline Silicon Dots Embedded in SiO<sub>2</sub>
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Abstract
Simultaneous surface and current imaging through nanocrystalline silicon (nc-Si) dots embedded in SiO2 was achieved using a contact mode atomic force microscope (AFM) under a tip-to-sample bias voltages of about 5 V. The obtained images were then analyzed using a one-dimensional model of current density, which took account of the spherical shape of the nc-Si dots, the substrate orientation and the sample bias. A comparison between the experimental and theoretical results showed a fair agreement when the current pass through the dot center, although a large difference was found at a higher voltage. In addition, our model predicted tunneling current oscillations due to a change in tip position relative to the dot center.
Journal
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- Japanese Journal of Applied Physics
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Japanese Journal of Applied Physics 44 (1-7), L88-L91, 2005
The Japan Society of Applied Physics
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Details 詳細情報について
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- CRID
- 1390001206266896000
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- NII Article ID
- 10014420424
- 210000059690
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- NII Book ID
- AA10650595
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- ISSN
- 13474065
- 00214922
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- Text Lang
- en
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- Data Source
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- JaLC
- Crossref
- CiNii Articles
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- Abstract License Flag
- Disallowed