Growth of MnGeP2 Thin Films by Molecular Beam Epitaxy

DOI Web Site Web Site Web Site 33 References
  • Minami Kazuyuki
    Graduate School of Engineering, Tokyo University of Agriculture and Technology
  • Jogo Jumpei
    Graduate School of Engineering, Tokyo University of Agriculture and Technology
  • Smirnov Valery
    Ioffe Physico-Technical Institute
  • Yuasa Hideki
    Graduate School of Engineering, Tokyo University of Agriculture and Technology
  • Nagatsuka Toshikazu
    Graduate School of Engineering, Tokyo University of Agriculture and Technology
  • Ishibashi Takayuki
    Graduate School of Engineering, Tokyo University of Agriculture and Technology
  • Morishita Yoshitaka
    Graduate School of Engineering, Tokyo University of Agriculture and Technology
  • Matsuo Yuriko
    Graduate School of Engineering, Tokyo University of Agriculture and Technology
  • Kangawa Yoshihiro
    Graduate School of Engineering, Tokyo University of Agriculture and Technology
  • Koukitu Akinori
    Graduate School of Engineering, Tokyo University of Agriculture and Technology
  • Sato Katsuaki
    Graduate School of Engineering, Tokyo University of Agriculture and Technology

Bibliographic Information

Other Title
  • Growth of MnGeP<sub>2</sub> Thin Films by Molecular Beam Epitaxy

Search this article

Abstract

Epitaxial growth of the Mn-containing novel ternary compound MnGeP2 has been investigated. Prior to the growth experiments, theoretical studies using an ab initio calculation were carried out, on the basis of which the stable existence of MnGeP2 with a chalcopyrite structure was predicted. Growth experiments of Mn-Ge-P were performed on GaAs(001) and InP(001) substrates using a molecular beam epitaxy (MBE) technique, in which Mn and Ge were supplied from solid sources and P from a tertiary butyl phosphine (TBP) gas source. The optimum growth condition has been estimated on the basis of X-ray diffraction studies. Oriented overgrowth of MnGeP2 was confirmed from a reciprocal lattice mapping (RLM) on X-ray diffraction (XRD) analyses, and lattice constants have been determined to be a=0.569 nm and c=1.13 nm based on the assumption that the material has a tetragonal crystal structure.

Journal

References(33)*help

See more

Keywords

Details 詳細情報について

Report a problem

Back to top