Structural and Electrical Properties of Polycrystalline Bi<sub>4-x</sub>Nd<sub>x</sub>Ti<sub>3</sub>O<sub>12</sub> Ferroelectric Thin Films with in-Plane c-Axis Orientations

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  • Matsuda Hirofumi
    Research Institute of Instrumentation Frontier, National Institute of Advanced Industrial Science and Technology
  • Kurachi Masahiro
    Department of Chemistry, Sophia University
  • Uchida Hiroshi
    Department of Chemistry, Sophia University
  • Watanabe Takayuki
    Department of Innovative and Engineered Materials, Tokyo Institute of Technology
  • Iijima Takashi
    Research Institute of Instrumentation Frontier, National Institute of Advanced Industrial Science and Technology
  • Koda Seiichiro
    Department of Chemistry, Sophia University
  • Funakubo Hiroshi
    Department of Innovative and Engineered Materials, Tokyo Institute of Technology

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  • Structural and Electrical Properties of Polycrystalline Bi4-xNdxTi3O12 Ferroelectric Thin Films with in-Plane c-Axis Orientations

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Bi4−xNdxTi3O12 (BNT, x=0.25, 0.5, 0.75) thin films with in-plane c-axis orientations were grown on IrO2/Si from solution route and their electrical properties were studied. The remanent polarization exhibited a broad peak against x with the maximum value of 2Pr=47 μC/cm2 at x=0.5. The orthorhombic lattice parameters and Curie temperature TC were measured for BNT powders prepared from the same coating solutions. Both orthorhombic anisotropy a⁄b and TC monotonically decreased with increasing x. Irrespective of x, leakage current density J<1.5×10−7 A/cm2 under 100 kV/cm was observed by optimizing film growth temperature TG=700°C, even though the Bi2O2 blocking layers aligned perpendicular to the film.

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