Nanoholes in InP and C60 Layers on GaAs Substrates by Using AlGaAs Nanowire Templates

• Tateno Kouta

  NTT Basic Research Laboratories, NTT Corporation

• Gotoh Hideki

  NTT Basic Research Laboratories, NTT Corporation

• Watanabe Yoshio

  NTT Advanced Technology Corporation

Bibliographic Information

Other Title

• Nanoholes in InP and C₆₀ Layers on GaAs Substrates by Using AlGaAs Nanowire Templates

Abstract

As one of the nano-scale fabrication techniques, free-standing nanowires are promising. We have developed a new method for nanohole fabrication using nanowire templates; that is, etching the exposed wires selectively after the layer growth. We have demonstrated nanoholed array in InP and C₆₀ layers on GaAs substrates. For the metalorganic vapor phase epitaxy of InP, (111)B facets tend to form so that the AlGaAs nanowires are easily removed. Tilted nanowires and nanoholes are possible by using (311)B substrates. As another holed layer case, a C₆₀ layer was tried. We found that this method can also be applied to the fragile material like C₆₀.

Journal

• Japanese Journal of Applied Physics

  Japanese Journal of Applied Physics 44 (12-15), L428-L431, 2005

  The Japan Society of Applied Physics

Keywords

• nanowire
• nanohole
• AlGaAs
• InP
• C<SUB>60</SUB>
• scanning electron microscope

Details

• CRID: 1390282681241991552
• NII Article ID: 210000059536
• NII Article ID: 10015474150
• NII Book ID: AA11906093
• DOI: 10.1143/jjap.44.l428
• ISSN: 13474065
• ISSN: 00214922
• NDL BIB ID: 7299151
• Web Site: http://id.ndl.go.jp/bib/7299151
• Web Site: https://ndlsearch.ndl.go.jp/books/R000000004-I7299151
• Web Site: https://iopscience.iop.org/article/10.1143/JJAP.44.L428
• Web Site: https://iopscience.iop.org/article/10.1143/JJAP.44.L428/pdf
• Text Lang: en
• Data Source:
  • JaLC
  • NDL
  • Crossref
  • CiNii Articles
• Abstract License Flag: Disallowed