書誌事項
- タイトル別名
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- Characteristics of Substrate Current in Magnetron Sputtering of Nickel with Multipolar Magnetic Plasma Confinement Assisted by Inductively Coupled Plasma
- ユウドウ ケツゴウ プラズマ シエンガタ タジュウ ジキョク マグネトロンスパッタホウ ニ ヨル ニッケルセイマクジ ノ キバン デンリュウ トクセイ
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The discharge characteristics in magnetron sputtering of Ni with multipolar magnetic plasma confinement (MMPC) assisted by inductively coupled plasma (ICP) were investigated. When sputtering with MMPC assisted by ICP, the current flowing into the substrate due to Ar+ ions and sputtered Ni+ ions is increased up to 46 mA, about 2.7 times that of a conventional magnetron sputtering system. The substrate current significantly increases in comparison with a conventional magnetron sputtering system as the target dc bias voltage increases. It is shown that a nickel film with the orientation of (111) plane is formed by using ICP.
収録刊行物
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- 真空
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真空 48 (3), 187-189, 2005
一般社団法人 日本真空学会
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詳細情報 詳細情報について
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- CRID
- 1390001204064469120
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- NII論文ID
- 10015476662
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- NII書誌ID
- AN00119871
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- ISSN
- 18809413
- 05598516
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- NDL書誌ID
- 7322299
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- 本文言語コード
- ja
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- データソース種別
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- JaLC
- NDL
- Crossref
- CiNii Articles
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- 抄録ライセンスフラグ
- 使用不可