Cu(In,Al)S2 Thin Film Solar Cell

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  • Inazu Takuya
    Department of Electrical and Electronic Engineering, Faculty of Engineering, Shinshu University
  • Bhandari Ramesh Kumar
    Department of Electrical and Electronic Engineering, Faculty of Engineering, Shinshu University
  • Kadowaki Yuji
    Department of Electrical and Electronic Engineering, Faculty of Engineering, Shinshu University
  • Hashimoto Yoshio
    Department of Electrical and Electronic Engineering, Faculty of Engineering, Shinshu University
  • Ito Kentaro
    Department of Electrical and Electronic Engineering, Faculty of Engineering, Shinshu University

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  • Cu(In,Al)S<sub>2</sub> Thin Film Solar Cell

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Abstract

A Cu(In,Al)S2 thin film solar cell has exhibited good adhesion to Mo-coated glass and comparatively high efficiency. The sputter-deposited metallic precursor was sulfurized and then treated in a KCN solution to remove a CuxS impurity phase and an excessive Al compound from the film surface. When the precursor layer was Cu-rich, the treated sulfide film could be used as an efficient absorber material. It had the same band gap as CuInS2. The spectral response of the cell was increased in a short wavelength range. The bottom region of the film was considered to consist of a Cu(In,Al)S2 alloy that enhanced the film adhesion to the Mo back contact. The film was analyzed using X-ray diffraction, electron probe microanalysis, scanning electron microscopy and field ion microscopy combined with focused ion beam technique.

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