Epitaxial Growth Map for Bi<sub>4</sub>Ti<sub>3</sub>O<sub>12</sub> Films: a Determining Factor for Crystal Orientation

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  • Watanabe Takayuki
    Department of Innovative and Engineered Materials, Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology
  • Funakubo Hiroshi
    Department of Innovative and Engineered Materials, Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology PRESTO, Japan Science and Technology Corporation (JST)

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  • Epitaxial Growth Map for Bi4Ti3O12 Films: a Determining Factor for Crystal Orientation

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Bi4Ti3O12 films were epitaxially grown at 600–750°C on various types of single-crystal oxide substrate by metal-organic chemical vapor deposition. In terms of the oxygen interatomic distances of the substrates used, the crystal orientations of the deposited epitaxial films were classified into three groups: (118), in-plane c-axis, and (001) orientations. The films on substrates with an oblong in-plane oxygen unit, had a (100)/(010) and/or (118) orientation, wheras those on substrates with a square in-plane oxygen unit had (001) or (hk0)⁄(kh0) orientation. There was an intermediate region between the (100)/(010) and (118) orientations at the present deposition temperature, where both orientations coexisted. As a result, the relationship between in-plane oxygen interatomic distances of the substrates and film orientation was summarized into an epitaxial growth map. This map is applicable to the epitaxial growth of other bismuth-layer-structured ferroelectric thin films.

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