Realization of In Situ Doped n-Type and p-Type Si-Microprobe Array by Selective Vapor-Liquid-Solid (VLS) Growth Method
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- Islam Md. Shofiqul
- Department of Electrical and Electronic Engineering, Toyohashi University of Technology
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- Ishino Hiroshi
- Department of Electrical and Electronic Engineering, Toyohashi University of Technology
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- Kawano Takeshi
- Department of Electrical and Electronic Engineering, Toyohashi University of Technology
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- Takao Hidekuni
- Department of Electrical and Electronic Engineering, Toyohashi University of Technology
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- Sawada Kazuaki
- Department of Electrical and Electronic Engineering, Toyohashi University of Technology
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- Ishida Makoto
- Department of Electrical and Electronic Engineering, Toyohashi University of Technology
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Abstract
In this paper we report the development of n-type and p-type Si-microprobe arrays fabricated by using in situ doping in vapor-liquid-solid (VLS) growth employing a gas-source molecular beam epitaxy (GS-MBE) system as the growth environment. VLS growth using Si2H6 only gives intrinsic Si microprobes with the resistivity of ∼104 Ω-cm, which decreases to ∼10−2 Ω-cm after phosphorous diffusion at 1100°C. However, by incorporating in situ doping into the VLS growth method, more conductive probes (resistivity ∼10−3 Ω-cm) can be realized at a temperature less than 700°C. The site and diameter of the VLS-grown probe can be controlled and the growth rate is higher than that of a poly-Si or epitaxial Si crystal grown by the vapor-solid (VS) method. Due to the low processing temperature, in situ doping is effective for realizing highly conductive probe arrays with smart sensor devices by a standard IC process followed by VLS growth. The wide range of doping leads to the possibility of using these probes for the fabrication of vertical active devices such as diodes and transistors.
Journal
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- Japanese Journal of Applied Physics
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Japanese Journal of Applied Physics 44 (4B), 2161-2165, 2005
The Japan Society of Applied Physics
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Details 詳細情報について
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- CRID
- 1390001206266748416
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- NII Article ID
- 10015703596
- 210000057675
- 130004533727
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- NII Book ID
- AA10457675
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- ISSN
- 13474065
- 00214922
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- NDL BIB ID
- 7306172
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- Text Lang
- en
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- Data Source
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- JaLC
- NDL
- Crossref
- CiNii Articles
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- Abstract License Flag
- Disallowed