Epitaxial Growth of Al-Doped β-FeSi2 on Si by Ion Beam Synthesis

• Yoshihito Maeda

• Yoshikazu Terai

• Masaru Itakura

Bibliographic Information

Other Title

• Epitaxial Growth of Al Doped ベータ FeSi2 on Si by Ion Beam Synthesis
• Special Issue: Solid State Devices & Materials
• Special Issue Solid State Devices Materials

Abstract

コレクション : 国立国会図書館デジタルコレクション > デジタル化資料 > 雑誌

Journal

• Japanese journal of applied physics. Part. 1, Regular papers, brief communications & review papers : JJAP

  Japanese journal of applied physics. Part. 1, Regular papers, brief communications & review papers : JJAP 44 (4B), 2502-2505, 2005-04

  Tokyo : Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physics

Keywords

• photoluminescence

Details

• CRID: 1520290884276677376
• NII Article ID: 10015704647
• NII Book ID: AA10457675
• ISSN: 00214922
• NDL BIB ID: 7306545
• Web Site: http://id.ndl.go.jp/bib/7306545
• Web Site: https://ndlsearch.ndl.go.jp/books/R000000004-I7306545
• Text Lang: en
• NDL Source Classification:
  • ZM35(科学技術--物理学)
• Data Source:
  • NDL
  • CiNii Articles