Charge-State Control of Phosphorus Donors in Silicon-on-Insulator Metal-Oxide-Semiconductor Field-Effect Transistor
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- Ono Yukinori
- NTT Basic Research Laboratories, NTT Corporation
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- Nishiguchi Katsuhiko
- NTT Basic Research Laboratories, NTT Corporation
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- Inokawa Hiroshi
- NTT Basic Research Laboratories, NTT Corporation
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- Horiguchi Seiji
- Department of Electrical and Electronic Engineering, Faculty of Engineering and Resource Science, Akita University
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- Takahashi Yasuo
- Graduate School of Information Science and Technology, Hokkaido University
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Abstract
The drain current vs gate-voltage characteristics of a phosphorus-doped n-channel silicon-on-insulator metal-oxide-semiconductor field-effect transistor have been investigated. It was shown that, by controlling the voltage to the substrate at 20 K, the charge states of phosphorus donors can be changed in a controlled manner. Most of the donors are neutralized for the substrate voltage of around 0 V, while a major portion of the donors is ionized for a positive or negative voltage. Such a change can be detected by monitoring the change in the threshold voltage of the transistor. This is an experimental demonstration of the systematic control and monitoring of donor charge states in silicon.
Journal
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- Japanese Journal of Applied Physics
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Japanese Journal of Applied Physics 44 (4B), 2588-2591, 2005
The Japan Society of Applied Physics
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Keywords
Details 詳細情報について
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- CRID
- 1390001206264526592
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- NII Article ID
- 10015704970
- 130004533749
- 210000057783
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- NII Book ID
- AA10457675
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- ISSN
- 13474065
- 00214922
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- NDL BIB ID
- 7306643
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- Text Lang
- en
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- Data Source
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- JaLC
- NDL
- Crossref
- CiNii Articles
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- Abstract License Flag
- Disallowed