Growth Processes and Electrical Characteristics of Silicon Nitride Films Formed on Si(100) by Radical Nitrogen
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- IKEDA Hiroya
- Department of Crystalline Materials Science, Graduate School of Engineering, Nagoya University
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- MATSUSHITA Daisuke
- Department of Crystalline Materials Science, Graduate School of Engineering, Nagoya University
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- NAITO Shinya
- Department of Crystalline Materials Science, Graduate School of Engineering, Nagoya University
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- OHMORI Kenji
- Department of Crystalline Materials Science, Graduate School of Engineering, Nagoya University
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- SAKAI Akira
- Department of Crystalline Materials Science, Graduate School of Engineering, Nagoya University
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- ZAIMA Shigeaki
- Center for Cooperative Research in Advanced Science and Technology, Nagoya University
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- YASUDA Yukio
- Department of Crystalline Materials Science, Graduate School of Engineering, Nagoya University
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- Extended abstracts of the ... Conference on Solid State Devices and Materials
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Extended abstracts of the ... Conference on Solid State Devices and Materials 2001 232-233, 2001-09-25
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詳細情報 詳細情報について
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- CRID
- 1573105974999595648
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- NII論文ID
- 10015752767
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- NII書誌ID
- AA10777858
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- 本文言語コード
- en
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- データソース種別
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