Fe/PbTe joining by plasma-activated sintering.

• KANG Yan-Sheng

  National Aerospace Laboratory, Kakuda Research Center

• MORIYA Shin-ichi

  National Aerospace Laboratory, Kakuda Research Center

• NIINO Masayuki

  National Aerospace Laboratory, Kakuda Research Center

• NODA Yasutoshi

  Department of Materials Science, Faculty of Engineering, Tohoku University

• CHEN Lidong

  Institute for Material Research; Tohoku University

Bibliographic Information

Other Title

• 放電プラズマ焼結によるＦｅ／ＰｂＴｅ接合

Abstract

PbTe sintered materials and metal electrode-semiconductor joints were prepared by plasma-activated sintering (PAS). The undoped PbTe powder (particle size of -1mm) was used for p-type as the source material, while a mixture of 4000 molppm PbI2 (dopant) with the undoped powder for n-type. The large carrier concentration and low mobility resulted for the p-type sintered material, compared with data for the melt-grown undoped PbTe. As for the n-type, the carrier concentration was not fully controlled and the Hall mobility was less than those of melt grown crystals, which indicates that sintering period might be too short to assure a uniformity of doping. The sintering of the semiconductor powder and the joining of metal electrode-semiconductor were simultaneously made in the single PAS process. The Fe/SnTe/p-PbTe and Fe/n-PbTe joints were successful made from the inspections by optical microscope and electric potential measurements, which will lead us to conform a π-shaped thermoelectric device.

Journal

• Journal of Advanced Science

  Journal of Advanced Science 8 (3/4), 167-169, 1996

  Society of Advanced Science

Keywords

• plasma-activated sintering
• lead telluride
• electrode-semiconductor joint
• electric potential profilee

Details

• CRID: 1390001204342144384
• NII Article ID: 10016058145
• NII Book ID: AA11948435
• DOI: 10.2978/jsas.8.167
• ISSN: 18813917
• ISSN: 09155651
• Text Lang: ja
• Data Source:
  • JaLC
  • Crossref
  • CiNii Articles
• Abstract License Flag: Disallowed