Atom Manipulation on Si and Ge Surfaces using Atomic Force Microscope

• MORITA Seizo

  Department of Electrical, Electronic and Information Engineering, Graduate School of Engineering, Osaka University Handai Frontier Research Center (Handai FRC)

• SUGIMOTO Yoshiaki

  Department of Electrical, Electronic and Information Engineering, Graduate School of Engineering, Osaka University

• OYABU Noriaki

  Department of Electrical, Electronic and Information Engineering, Graduate School of Engineering, Osaka University

• CUSTANCE Óscar

  Handai Frontier Research Center (Handai FRC)

• NISHI Ryuji

  Department of Electrical, Electronic and Information Engineering, Graduate School of Engineering, Osaka University Science and Technology Center for Atoms, Molecules, and Ions Control (STAMIC), Graduate School of Engineering, Osaka University

• SEINO Yoshihide

  Handai Frontier Research Center (Handai FRC)

• YI In Sook

  Handai Frontier Research Center (Handai FRC)

• ABE Masayuki

  Department of Electrical, Electronic and Information Engineering, Graduate School of Engineering, Osaka University Handai Frontier Research Center (Handai FRC)

Bibliographic Information

Other Title

• 原子間力顕微鏡によるＳｉとＧｅ表面での原子操作
• ゲンシカンリョク ケンビキョウ ニ ヨル Si ト Ge ヒョウメン デ ノ ゲンシ ソウサ

Abstract

In this review article, at first, we introduced recent developments of powerful and sensitive atomic force microscope (AFM). Then, we introduced recent three topics related to AFM. The first one is an atom selective imaging of semiconductor surfaces with intermixed Si and Sn adatoms at room temperature (RT), i.e., chemical discrimination of two atom species on semiconductor surfaces at RT. The second one is vertical and lateral atom manipulations of semiconductor atoms based on the mechanical method at low temperature (LT). The last one is a novel atom manipulation method that enables us to create complex nanostructures assembled from more than two atom species at RT. Using this novel atom manipulation method, we constructed “Atom Inlay” at RT, i.e., atom letters “Sn” consisting of Sn atoms embedded in Ge atoms.

Journal

• Hyomen Kagaku

  Hyomen Kagaku 26 (6), 351-356, 2005

  The Surface Science Society of Japan

Details

• CRID: 1390282681433971456
• NII Article ID: 10016147746
• NII Article ID: 130004486277
• NII Book ID: AN00334149
• DOI: 10.1380/jsssj.26.351
• COI: 1:CAS:528:DC%2BD2MXovVOrsLw%3D
• ISSN: 18814743
• ISSN: 03885321
• ISSN: http://id.crossref.org/issn/03885321
• NDL BIB ID: 7393833
• Web Site: http://id.ndl.go.jp/bib/7393833
• Web Site: https://ndlsearch.ndl.go.jp/books/R000000004-I7393833
• Web Site: http://www.jstage.jst.go.jp/article/jsssj/26/6/26_6_351/_pdf
• Text Lang: ja
• Data Source:
  • JaLC
  • NDL
  • Crossref
  • CiNii Articles
  • KAKEN
• Abstract License Flag: Disallowed