Characterization of Atom Diffusion in Polycrystalline Si/SiGe/Si Stacked Gate(Si Devices and Processes, <Special Section>Fundamental and Application of Advanced Semiconductor Devices)

• MURAKAMI Hideki

  Graduate School of Advanced Sciences and Matter, Hiroshima University

• MORIWAKI Yoshikazu

  Graduate School of Advanced Sciences and Matter, Hiroshima University

• FUJITAKE Masafumi

  Graduate School of Advanced Sciences and Matter, Hiroshima University

• AZUMA Daisuke

  Graduate School of Advanced Sciences and Matter, Hiroshima University

• HIGASHI Seiichiro

  Graduate School of Advanced Sciences and Matter, Hiroshima University

• MIYAZAKI Seiichi

  Graduate School of Advanced Sciences and Matter, Hiroshima University

抄録

We have fabricated poly-Si/Si_<0.7>Ge_<0.3>/Si stacked gate on 4 nm-thick Si0_2/Si(100), and examined the diffusion of Ge and impurities as a function of annealing temperature in the range of 800-1000℃ by energy dispersive X-ray spectroscopy (EDX) and secondary ion mass spectrometry (SIMS). It is reviealed that germanium atoms diffuse into 100 nmthick silicon cap layer uniformly after 1000℃ annealing for 30 min and the crystallinity of As^+ doped poly-SiGe is better than that of BF^+_2 doped polySiGe. Also, in comparison with poly-Si gate MOS capacitors, we have confirmed that MOS capcitors with p^+ and n^+ SiGe gates show a 0.2 V reduction in the flat-band voltage for p^+ gate and no change for n^+ gate, with no increase in gate leakage current with respect to the oxide voltage. This result is attributable to the difference in the energy band structure between Si and Si_<0.7>Ge_<0.3>.

収録刊行物

• IEICE transactions on electronics

  IEICE transactions on electronics 88 (4), 646-650, 2005-04-01

  一般社団法人電子情報通信学会

キーワード

• SiGe gate
• gate depletion

詳細情報

• CRID: 1570854175256317696
• NII論文ID: 10016563234
• NII書誌ID: AA10826283
• ISSN: 09168524
• 本文言語コード: en
• データソース種別:
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