Raman Spectroscopic Characterization of Tetragonal PbZr<sub>x</sub>Ti<sub>1-x</sub>O<sub>3</sub> Thin Films: A Rapid Evaluation Method for c-Domain Volume

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  • Nishida Ken
    Department of Electronic and Photonic Systems Engineering, Kochi University of Technology
  • Osada Minoru
    Advanced Materials Laboratory, National Institute for Materials Science (NIMS)
  • Wada Syunshuke
    Department of Electronic and Photonic Systems Engineering, Kochi University of Technology
  • Okamoto Shoji
    Department of Innovative and Engineered Materials, Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology
  • Ueno Risako
    Department of Innovative and Engineered Materials, Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology
  • Funakubo Hiroshi
    Department of Innovative and Engineered Materials, Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology
  • Katoda Takashi
    Department of Electronic and Photonic Systems Engineering, Kochi University of Technology

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  • Raman Spectroscopic Characterization of Tetragonal PbZrxTi1-xO3 Thin Films: A Rapid Evaluation Method for c-Domain Volume

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We present the use of Raman spectroscopy as a rapid and convenient evaluation tool for domain distribution of tetragonal PbZrxTi1−xO3 (PZT) thin films. From polarized Raman analyses of epitaxial PZT thin films with various c-domain volumes, we found that the intensity of the A1(TO) modes linearly scales with the c-domain volume. These observations, as well as the quick and nondestructive characteristics of this technique, clearly imply that Raman spectroscopy has enormous potential to quantify the fraction of c-domain volumes in a wide range of PZT devices.

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