Recovery from Dry Etching Damage in ZnTe by Thermal Annealing

• Guo Qixin

  Department of Electrical and Electronic Engineering, Faculty of Science and Engineering, Saga University

• Kume Yusukei

  Department of Electrical and Electronic Engineering, Faculty of Science and Engineering, Saga University

• Tanaka Tooru

  Department of Electrical and Electronic Engineering, Faculty of Science and Engineering, Saga University

• Nishio Mitsuhiro

  Department of Electrical and Electronic Engineering, Faculty of Science and Engineering, Saga University

• Ogawa Hiroshi

  Department of Electrical and Electronic Engineering, Faculty of Science and Engineering, Saga University

抄録

Thermal annealing has been applied to the recovery from dry-etch-induced damage on ZnTe surfaces. We have demonstrated that the optical property of dry-etched ZnTe can be fully recovered by thermal annealing at temperatures above 300°C for 10 min, indicating that thermal annealing can eliminate the damage on ZnTe induced during reactive ion etching.

収録刊行物

• Japanese Journal of Applied Physics

  Japanese Journal of Applied Physics 44 (24-27), L863-L865, 2005

  The Japan Society of Applied Physics

キーワード

• zinc telluride
• reactive ion etching
• surface damage
• recovery
• thermal annealing

詳細情報

• CRID: 1390282681242901376
• NII論文ID: 10016590990
• NII論文ID: 210000059684
• NII論文ID: 130004533377
• NII書誌ID: AA11906093
• DOI: 10.1143/jjap.44.l863
• ISSN: 13474065
• ISSN: 00214922
• NDL書誌ID: 7356498
• Web Site: https://ndlsearch.ndl.go.jp/books/R000000004-I7356498
• Web Site: https://iopscience.iop.org/article/10.1143/JJAP.44.L863
• Web Site: https://iopscience.iop.org/article/10.1143/JJAP.44.L863/pdf
• 本文言語コード: en
• データソース種別:
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  • NDL
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• 抄録ライセンスフラグ: 使用不可