Growth of Pillarlike GaN Nanostructures

• Takeda Satoshi

  Department of Electrical and Electronic Engineering, Shizuoka University

• Ishino Kenei

  Department of Electrical and Electronic Engineering, Shizuoka University

• Inoue Yoku

  Department of Electrical and Electronic Engineering, Shizuoka University

• Ishida Akihiro

  Department of Electrical and Electronic Engineering, Shizuoka University

• Fujiyasu Hiroshi

  Department of Electrical and Electronic Engineering, Shizuoka University

• Kominami Hiroko

  Department of Electrical and Electronic Engineering, Shizuoka University

• Mimura Hidenori

  Department of Electrical and Electronic Engineering, Shizuoka University

• Nakanishi Yoichiro

  Department of Electrical and Electronic Engineering, Shizuoka University

• Sakakibara Shingo

  Yamaha Corporation

抄録

We have characterized the growth of GaN nanostructures on Si (111). Hexagonal faceted pillarlike GaN nanostructures (GaN nanopillars) were grown by hot wall epitaxy. The GaN nanopillars were self-assembled. Scanning electron microscopy and atomic force microscopy were used to characterize the samples. The typical diameter of the GaN nanopillars was 200 nm. It was found that GaN nanopillars are grown only on a low-temperature GaN island buffer layer. By changing the annealing temperature of the buffer layer, the density of the GaN nanopillars was controlled from 0.4×10⁸ to 3.5×10⁸ cm⁻².

収録刊行物

• Japanese Journal of Applied Physics

  Japanese Journal of Applied Physics 44 (7B), 5664-5666, 2005

  The Japan Society of Applied Physics

キーワード

• GaN
• nanostructures
• hot wall epitaxy

詳細情報

• CRID: 1390001206265181824
• NII論文ID: 10016677734
• NII論文ID: 210000058514
• NII論文ID: 130004534423
• NII書誌ID: AA10457675
• DOI: 10.1143/jjap.44.5664
• ISSN: 13474065
• ISSN: 00214922
• NDL書誌ID: 7379076
• Web Site: https://ndlsearch.ndl.go.jp/books/R000000004-I7379076
• Web Site: https://iopscience.iop.org/article/10.1143/JJAP.44.5664
• Web Site: https://iopscience.iop.org/article/10.1143/JJAP.44.5664/pdf
• 本文言語コード: en
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