Improved Etched Surface Morphology in Electron Cyclotron Resonance-Reactive Ion Etching of GaN by Cyclic Injection of CH4/H2/Ar and O2 with Constant Ar Flow

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  • Improved Etched Surface Morphology in Electron Cyclotron Resonance-Reactive Ion Etching of GaN by Cyclic Injection of CH<sub>4</sub>/H<sub>2</sub>/Ar and O<sub>2</sub> with Constant Ar Flow

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Abstract

Electron cyclotron resonance reactive ion etching (ECR-RIE) conditions for GaN using CH4/H2/Ar are investigated. GaN can be etched even with continuous etching using CH4/H2/Ar when Ar gas of a higher flow rate is introduced, but only rough etched surfaces are obtained. A cyclic injection method using CH4/H2/Ar etching gas and O2 ashing with constant Ar flow is introduced for GaN etching for the first time, and a rather high etch rate and very smooth etched surfaces are successfully obtained. The cyclic injection of CH4/H2 and O2 prevents deposition of carbon polymers by oxygen plasma, and constant Ar flow removes the surface oxidized layer formed during the O2 ashing by Ar+ ion etching. Under the optimized etching condition, an etch rate of 34 nm/min and a good morphology of etched surfaces (rms of less than 1.0 nm) are obtained.

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