Nanoholes Formed by Au Particles Digging into GaAs and InP Substrates by Reverse Vapor-Liquid-Solid Mechanism

• Tateno Kouta

  NTT Basic Research Laboratories, NTT Corporation

• Gotoh Hideki

  NTT Basic Research Laboratories, NTT Corporation

• Nakano Hidetoshi

  NTT Basic Research Laboratories, NTT Corporation

Abstract

Under a CBr₄ gas supply, Au nanoparticles dig into GaAs and InP substrates to form nanoholes through the reverse vapor–liquid–solid mechanism. The nanohole formation tends to proceed in the [111]B direction. For GaAs, straight holes sometimes appear in the [011] and [211]B directions. This is due to the stable {111}B facets, which block the etching. For InP, many straight holes are seen in the [111]B direction. For both materials, direct etching of the surface also occurs. It is therefore necessary to find the optimum etching conditions for high selectivity to fabricate nanoholes.

Journal

• Japanese Journal of Applied Physics

  Japanese Journal of Applied Physics 44 (50-52), L1553-L1555, 2005

  The Japan Society of Applied Physics

Keywords

• nanohole
• GaAs
• InP
• CBr<SUB>4</SUB>
• etching
• scanning electron microscope

Details

• CRID: 1390001206268820224
• NII Article ID: 10016920660
• NII Article ID: 210000059437
• NII Article ID: 130004533874
• NII Book ID: AA11906093
• DOI: 10.1143/jjap.44.l1553
• ISSN: 13474065
• ISSN: 00214922
• NDL BIB ID: 7755945
• Web Site: http://id.ndl.go.jp/bib/7755945
• Web Site: https://ndlsearch.ndl.go.jp/books/R000000004-I7755945
• Web Site: https://iopscience.iop.org/article/10.1143/JJAP.44.L1553
• Web Site: https://iopscience.iop.org/article/10.1143/JJAP.44.L1553/pdf
• Text Lang: en
• Data Source:
  • JaLC
  • NDL
  • Crossref
  • CiNii Articles
• Abstract License Flag: Disallowed