Simulation Study of the Dependence of Submicron Polysilicon Thin-Film Transistor Output Characteristics on Grain Boundary Position

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Author(s)

Journal

  • Japanese journal of applied physics Pt. 1 Regular papers, brief communications & review papers

    Japanese journal of applied physics Pt. 1 Regular papers, brief communications & review papers 44(12), 8322-8328, 2005-12-30

    Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physics

References:  32

Cited by:  1

Codes

  • NII Article ID (NAID)
    10016958359
  • NII NACSIS-CAT ID (NCID)
    AA10457675
  • Text Lang
    ENG
  • Article Type
    Journal Article
  • Journal Type
    大学紀要
  • ISSN
    00214922
  • NDL Article ID
    7747362
  • NDL Source Classification
    ZM35(科学技術--物理学)
  • NDL Call No.
    Z53-A375
  • Data Source
    CJP  CJPref  NDL 
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