Thickness Dependence of Strain Field Distribution in SiGe Relaxed Buffer Layers

DOI Web Site Web Site Web Site 3 Citations 24 References
  • Sawano Kentarou
    Research Center for Silicon Nano-Science, Advanced Research Laboratories, Musashi Institute of Technology
  • Usami Noritaka
    Institute for Material Research, Tohoku University
  • Arimoto Keisuke
    Center for Crystal Science and Technology, University of Yamanashi
  • Nakagawa Kiyokazu
    Center for Crystal Science and Technology, University of Yamanashi
  • Shiraki Yasuhiro
    Research Center for Silicon Nano-Science, Advanced Research Laboratories, Musashi Institute of Technology

Bibliographic Information

Other Title
  • Thickoess Dependence of Strain Field Distribution in SiGe Relaxed Buffer Layers

Search this article

Abstract

The buffer thickness dependence of strain field distribution was investigated in SiGe heterostructures by micro-Raman spectroscopy. Crosshatch-like strain fluctuations were clearly observed in strained-Si and SiGe buffer layers, and the fluctuation wavelength was found to increase almost linearly with increasing buffer thickness. It was also found that SiGe homoepitaxial growth on planarized SiGe buffer layers gave rise to crosshatch roughness on the surface with almost the same morphology as the strain distribution, indicating that the strain fluctuation caused the roughness formation associated with growth kinetics. The strain fluctuation still remained on the buffer layer thicker than 7 μm, which should be taken into consideration for device applications.

Journal

Citations (3)*help

See more

References(24)*help

See more

Keywords

Details 詳細情報について

Report a problem

Back to top